Ferroelectric helps break transistor limits (spectrum.ieee.org)

> HZO is a ferroelectric. That is, it has a crystal structure that allows it to maintain an internal electrical field even when no external voltage is applied. (Conventional dielectrics don’t have this inherent electrical field.) When a voltage is applied to the transistor, HZO’s inherent electric field opposes it. In a transistor, this leads to a counterintuitive effect: A decrease in voltage causes an increase in the charge stored in HZO. This negative capacitance response effectively amplifies the gate control, helping the transistor’s 2D electron cloud accumulate charge and boosting the on-state current.

Negative capacitance in a field effect transistor is not new. In fact this has been shown mire than a decade ago. The reason it won't make its way into modern chips is because the materials used to make the ferroelectrics aren't CMOS foundry compatible.

ok, let's see it in a real-world production environment. What works in the lab doesn't always scale to the factory floor.

It's not an uninteresting thing (it's very interesting, from a purely technical POV) but it reads like so many "groundbreaking" press releases that never materialize

Found some explanation what negative capacitance is:

https://electronics.stackexchange.com/questions/611003/what-...