Samsung demonstrates 3D stacked FETs with triple nanosheet channels at 42nm (semiconductor.samsung.com)

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How about heat? Seems these days it's the heat above everything else that's the issue. And more density would only aggravate it.

This seems like it could accelerate the transition to sub-1nm nodes (previously projected to mid 2030s), maybe by the end of this decade.

FET: https://en.wikipedia.org/wiki/Field-effect_transistor

> A city provides a useful analogy. When available land becomes scarce, urban planners initially reduce the spacing between buildings and use roads and open spaces more efficiently. Eventually, however, further horizontal expansion becomes impractical. At that point, the solution is to build upward. High-rise buildings create more usable space on the same piece of land by utilizing the vertical dimension.

Really? someone tell that to my city

> By stacking multiple nanosheet channels, the effective channel width can be maintained even within a highly compact footprint.

The fact that this level of precision can be achieved on 300mm wafers over many dozens of separate steps in separate devices is an insane achievement on its own.

Permanent and global boycott of Samsung due to them shoving ads into smart refrigerators.

They’ll keep pushing till you push back.

so whats the implication for average joes here ? have no idea what these technical terms mean....